SIMS quantification of SiGe composition with low-energy ion beams
Systematic SIMS analyses with low‐energy (250 eV ∼1 keV) oxygen, cesium and krypton primary beams have been carried out on a set of fully strained uniform epitaxial Si1−xGex films (x = 5 ∼ 60%), as well as a germanium ion‐implanted silicon standard to investigate the matrix effect under various cond...
Saved in:
Published in | Surface and interface analysis Vol. 43; no. 1-2; pp. 657 - 660 |
---|---|
Main Authors | , , , , , , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Chichester, UK
John Wiley & Sons, Ltd
01.01.2011
Wiley |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | Systematic SIMS analyses with low‐energy (250 eV ∼1 keV) oxygen, cesium and krypton primary beams have been carried out on a set of fully strained uniform epitaxial Si1−xGex films (x = 5 ∼ 60%), as well as a germanium ion‐implanted silicon standard to investigate the matrix effect under various conditions. It is shown that preferential ion yield enhancement of one matrix component over the other can occur as the result of primary ion incorporation. Through defining a matrix yield factor, this work demonstrated that constant secondary ion yield ratios between Si ion and Ge ion over a large concentration range are only valid under some very specific analysis conditions. Emphases were placed on oxygen beam analyses with regard to steady‐state ion yields and surface transients. Both show some unique features only accessible under low‐energy conditions. Copyright © 2010 John Wiley & Sons, Ltd. |
---|---|
Bibliography: | ArticleID:SIA3620 ark:/67375/WNG-JLZTX4LD-C istex:2C4054EB8CA540DA94E7856C0968A6BE6644C3D5 ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0142-2421 1096-9918 1096-9918 |
DOI: | 10.1002/sia.3620 |