An Expanded Cox and Strack Method for Precise Extraction of Specific Contact Resistance of Transition Metal Oxide/n-Silicon Heterojunction
Specific contact resistance <inline-formula><tex-math notation="LaTeX">(\rho _{c})</tex-math></inline-formula>, commonly extracted by Cox and Strack method (CSM) and transfer length method (TLM), is one of the most important properties of carrier-selective contacts....
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Published in | IEEE journal of photovoltaics Vol. 9; no. 4; pp. 1113 - 1120 |
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Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Piscataway
IEEE
01.07.2019
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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