An Expanded Cox and Strack Method for Precise Extraction of Specific Contact Resistance of Transition Metal Oxide/n-Silicon Heterojunction

• Published in: IEEE journal of photovoltaics Vol. 9; no. 4; pp. 1113 - 1120
• Main Authors: Wang, Wei, Lin, Hao, Yang, Zhenhai, Wang, Zilei, Wang, Jiajia, Zhang, Longfei, Liao, Mingdun, Zeng, Yuheng, Gao, Pingqi, Yan, Baojie, Ye, Jichun
• Format: Journal Article
• Language: English
• Published: Piscataway IEEE 01.07.2019; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: CAD; Coefficient of variation; Computer aided design; Computer simulation; Contact resistance; Contact resistivity; Cox and Strack method (CSM); Current measurement; dopant-free solar cells; Electrodes; Heterojunctions; MoO<named-content xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" content-type="math" xlink:type="simple"> <inline-formula> <tex-math notation="LaTeX"> _{\rm x}</tex-math> </inline-formula> </named-content>/n-Si heterojunction; Resistance; Silicon; Silicon substrates; specific contact resistance; Substrates; transfer length method (TLM); Transition metal oxides; Transition metals; Transport properties
• ISSN: 2156-3381; 2156-3403
• DOI: 10.1109/JPHOTOV.2019.2917386

Specific contact resistance <inline-formula><tex-math notation="LaTeX">(\rho _{c})</tex-math></inline-formula>, commonly extracted by Cox and Strack method (CSM) and transfer length method (TLM), is one of the most important properties of carrier-selective contacts. However, in most cases, the hole-selective contacts (HSCs) deposited on n-type silicon (n-Si) substrate are Schottky heterojunction other than Ohmic contact, impeding the accurate extraction of <inline-formula><tex-math notation="LaTeX">\rho _{c}</tex-math></inline-formula> by CSM and TLM. In this paper, an expanded CSM is proposed to precisely extract the <inline-formula><tex-math notation="LaTeX">\rho _{c}</tex-math></inline-formula> of MoO x /n-Si heterojunction, achieving a generally lower coefficient of variation. The current transport characteristic and the <inline-formula><tex-math notation="LaTeX">\rho _{c}</tex-math></inline-formula> value of MoO x /n-Si heterocontact are further verified by technology computer aided design (TCAD) simulation. The results demonstrate that the expanded CSM enables a more precise <inline-formula><tex-math notation="LaTeX">\rho _{c}</tex-math></inline-formula> extraction, a better preparation technology compatibility, and a wider range of application, compared to TLM.