Prospects for a 1-THz vacuum microelectronic microstrip amplifier

• Published in: IEEE transactions on electron devices Vol. 38; no. 3; pp. 666 - 671
• Main Authors: McGruer, N.E., Johnson, A.C., McKnight, S.W., Schwab, W.C., Chan, C., Tong, S.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.03.1991; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Circuit properties; Current density; Electric, optical and optoelectronic circuits; Electronics; Electrons; Exact sciences and technology; Frequency; Microelectronics; Microstrip; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits; Power amplifiers; Power generation; Space heating; Space technology; Vacuum technology; Design; Millimetric wave; Voltage current curve; Wide band; Length; Geometrical parameter; Vacuum technique; Microwave amplifier; Passband; Microstrip
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/16.75179

Microstrip amplifiers using vacuum microelectronic technology with 1-50-W output power at frequencies potentially up to 1 THz are discussed. Practical design limitations are described, including loss in the gated field emission microstrip, required field emission current, space-charge limitations on emission current, and heat dissipation. Two possible designs are presented. The vacuum microelectronic microstrip amplifier appears to be feasible, provided field emitters with the required current densities can be fabricated. Higher output power and amplification to frequencies of 1 THz may be possible by separating the electron collector and the output microstrip. Areas for further work are discussed.< >