Ion implantation of iodine into silicon carbide: Influence of temperature on the produced damage and on the diffusion behaviour

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 266; no. 12-13; pp. 2810 - 2813
• Main Authors: Audren, A., Benyagoub, A., Thome, L., Garrido, F.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.06.2008; Elsevier
• Subjects: Condensed Matter; Diffusion of impurities; Ion radiation effects; Materials Science; Physics; Radiation damage (amorphization); Recrystallization; Silicon carbide; Ion radiation effects; Silicon carbide; 61.80.−x; Radiation damage (amorphization); Recrystallization; 61.80.Jh; 81.15.Np; Diffusion of impurities; 81.10.Jt
• ISSN: 0168-583X; 1872-9584; 1872-9584; 0168-583X
• DOI: 10.1016/j.nimb.2008.03.123

Silicon carbide (SiC) is anticipated as a potential cladding material for the nuclear fuel in the future high-temperature gas cooled nuclear reactors. In such a harsh environment, SiC will be submitted to energetic particles giving rise to atomic displacements which can alter its retention capability for the fission products. The aim of the present work is to examine the effects induced by the implantation of a typical fission product, namely iodine (I), into SiC at different temperatures and to study its diffusion behaviour under temperature and ion post-irradiation. Ion implantations at 400 or 600°C produce significantly less damage than implantation at room temperature followed by subsequent thermal annealing. In addition, there is no noticeable change in the I distribution profile even after thermal annealing up to 1000°C or after post-irradiation at 600°C with energetic heavy ions.