A Radiation-Hard Silicon Gate Bulk CMOS Cell Family

A radiation-hardened silicon gate CMOS two-port standard cell family utilizing a linear array layout topology with six to seven micron design rules and guardbanded n-channel devices has been developed. The process, structure, performance, and applications of this Expanded Linear Array (ELA) technolo...

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 27; no. 6; pp. 1712 - 1715
Main Authors Gibbon, Charles F., Habing, Donald H., Flores, Richard S.
Format Journal Article
LanguageEnglish
Published IEEE 01.01.1980
Subjects
Aluminum
CMOS technology
Etching
Implants
Integrated circuit interconnections
Laboratories
Routing
Silicon
Standards development
Threshold voltage
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Summary:A radiation-hardened silicon gate CMOS two-port standard cell family utilizing a linear array layout topology with six to seven micron design rules and guardbanded n-channel devices has been developed. The process, structure, performance, and applications of this Expanded Linear Array (ELA) technology are described.
Bibliography:SourceType-Scholarly Journals-2
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ObjectType-Conference Paper-1
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SourceType-Conference Papers & Proceedings-1
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ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.1980.4331093