Guard Ring Simulations for n-on-p Silicon Particle Detectors

We propose a new guard ring geometry for n-on-p silicon particle detectors for high luminosity applications. The performance of the guard ring structure is evaluated with simulations up to a radiation fluence of 1 x 10 15 n eq /cm 2 using an existing three level trap model for p-type FZ silicon. The...

Full description

Saved in:
Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 57; no. 5; pp. 2978 - 2986
Main Authors Koybasi, O, Bolla, G, Bortoletto, D
Format Journal Article
LanguageEnglish
Published New York IEEE 01.10.2010
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Breakdown
Charge carrier processes
Detectors
Device simulations
Doping
Electric potential
field plates
guard rings
Guards
Luminosity
n-on-p silicon particle detectors
Oxides
Plates
radiation hardness
Ring structures
Semiconductor process modeling
Silicon
Simulation
Substrates
Online AccessGet full text

Cover

More Information
Summary:We propose a new guard ring geometry for n-on-p silicon particle detectors for high luminosity applications. The performance of the guard ring structure is evaluated with simulations up to a radiation fluence of 1 x 10 15 n eq /cm 2 using an existing three level trap model for p-type FZ silicon. The post-irradiation performance improvement of guard rings with floating field plates pointing towards the sensitive region is demonstrated. The breakdown behavior of the guard ring structure is studied as a function of oxide charge, field plate length, and oxide thickness.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2010.2063439