Cathodoluminescence of Ultrathin InAs Layers Embedded in GaAs Matrix

Ultrathin InAs layers with different thicknesses, from 0.75 to 1.4 monolayer, are grown in the GaAs matrix by molecular beam epitaxy on GaAs (001) substrates. For sub-monolayer heterostructures, islands or segregations exist during the growth process. Taking advantage of the high spatial resolution...

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Bibliographic Details
Published inCrystals (Basel) Vol. 12; no. 9; p. 1225
Main Authors Yan, Qigeng, Wang, Siyuan, Guan, Xiaojin, He, Lei, Sun, Kesheng, Liang, Baolai
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 01.09.2022
Subjects
Cathodoluminescence
Electron beams
Energy
Epitaxial growth
Epitaxy
Gallium arsenide
Heterostructures
III-V heterostructures
Image transmission
Indium arsenides
Investigations
Molecular beam epitaxy
Monolayers
Monte Carlo simulation
Optical properties
Photoluminescence
Quantum dots
Segregations
Spatial resolution
Substrates
Thickness
ultrathin InAs nanostructures
X-rays
United States > US
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Summary:Ultrathin InAs layers with different thicknesses, from 0.75 to 1.4 monolayer, are grown in the GaAs matrix by molecular beam epitaxy on GaAs (001) substrates. For sub-monolayer heterostructures, islands or segregations exist during the growth process. Taking advantage of the high spatial resolution of focused electron beams, cathodoluminescence measurements obtain a smaller excitation spot than conventional photoluminescence. Based on the change on the peak position, line width, and intensity, cathodoluminescence spectra indicate that the size, geometry, and roughness develop with the InAs content. Moreover, spatial discontinuities of ultrathin InAs layers are observed on spectrum images and transmission electron microscopy images. This research reveals the correlation between the optical and structural properties of ultrathin InAs layers.
ISSN:2073-4352
2073-4352
DOI:10.3390/cryst12091225