Phonon energy dissipation in friction between black phosphorus layers

• Published in: Nanotechnology Vol. 35; no. 29; pp. 295402 - 295410
• Main Authors: Dong, Yun, Wang, Jinguang, Rui, Zhiyuan, Yang, Futian, Tang, Xinyi, Tao, Yi, Liu, Yifan, Shi, Bo
• Format: Journal Article
• Language: English
• Published: England IOP Publishing 15.07.2024
• Subjects: energy dissipation; monolayer/bilayer black phosphorus; phonon number; potential barrier; monolayer/bilayer black phosphorus; phonon number; energy dissipation; potential barrier
• ISSN: 0957-4484; 1361-6528
• DOI: 10.1088/1361-6528/ad3c47

Herein, we employ molecular dynamics simulations to decode the friction properties and phonon energy dissipation between black phosphorus layers. The observations reveal the influence of three factors, temperature, velocity, and normal load, on the friction force of monolayer/bilayer black phosphorus. Specifically, friction is negatively correlated with layer thickness and temperature, and positively correlated with velocity and normal load. The change in friction force is further explained in terms of frictional energy dissipation, and supplemented by the height of potential barriers as well as the number of excited phonons. From the phonon spectrum analysis, the phonon number at the contact interface is found to be higher than that at the non-contact interface. This is due to the larger distance of the contact interface atoms deviate from their equilibrium positions, resulting in higher total energy generated by more intense oscillations, and therefore contributes greater to friction.