Influence of parasitic inductances on transient current sharing in parallel connected synchronous rectifiers and Schottky-barrier diodes

The transient current sharing in parallel connected Schottky-barrier diodes and MOSFET synchronous rectifiers is analysed. It is shown that, because of parasitic inductances, the desired reduction of dead-time conducting losses and reverse-recovery peak current is limited, when discrete devices are...

Full description

Saved in:
Bibliographic Details
Published inIET circuits, devices & systems Vol. 1; no. 5; pp. 387 - 394
Main Authors POLENOV, D, LUTZ, J, PRÖBSTLE, H, BRÖSSE, A
Format Conference Proceeding Journal Article
LanguageEnglish
Published Stevenage Institution of Engineering and Technology 01.10.2007
John Wiley & Sons, Inc
Subjects
Applied sciences
Circuits
Conduction
Devices
Diodes
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Parallel connected
Rectifiers
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Synchronous
Transient current
Transistors
Inductance
Rectifier
MOSFET
Parallel connection
Current distribution
Schottky barrier diode
Switching
Online AccessGet full text

Cover

More Information
Summary:The transient current sharing in parallel connected Schottky-barrier diodes and MOSFET synchronous rectifiers is analysed. It is shown that, because of parasitic inductances, the desired reduction of dead-time conducting losses and reverse-recovery peak current is limited, when discrete devices are used. The total amount of conducting losses in the free-wheeling circuit can increase. A reduction of switching losses in half-bridge configurations is possible because of secondary effects.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ObjectType-Article-2
ObjectType-Feature-1
ISSN:1751-858X
1751-8598
DOI:10.1049/iet-cds:20060380