The electronic structures for the optical absorption of Hf-O-N thin films
Issue Title: Special Issue: ICE-2005 International Conference on Electroceramics The local structures of Hf-O-N thin films were analyzed using an extended X-ray absorption fine structure (EXAFS) study on Hf L ^sub III^-edge and first-principles calculations. Depending on their composition and atomic...
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Published in | Journal of electroceramics Vol. 17; no. 2-4; pp. 197 - 203 |
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Main Authors | , , , , |
Format | Conference Proceeding Journal Article |
Language | English |
Published |
Heidelberg
Springer
01.12.2006
Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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Summary: | Issue Title: Special Issue: ICE-2005 International Conference on Electroceramics The local structures of Hf-O-N thin films were analyzed using an extended X-ray absorption fine structure (EXAFS) study on Hf L ^sub III^-edge and first-principles calculations. Depending on their composition and atomic configurations, Hf^sub 4^O^sub 8^ (CN: 7.0), Hf^sub 4^O^sub 5^N^sub 2^ (CN: 6.25) and Hf^sub 4^O^sub 2^N^sub 4^(CN: 5.5) were suggested as the local structures of Hf-O-N thin films. The optical band gaps of Hf-O-N thin films were compared with the calculated band gap. And to investigate the optical absorption, the effects of film compositions on the valence bands of Hf-O-N thin films were analyzed by comparing the experimental valence band with the valence band.[PUBLICATION ABSTRACT] |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1385-3449 1573-8663 |
DOI: | 10.1007/s10832-006-0469-x |