Correlation between fabrication processes and thermal distribution in medium power MESFETs

Correlation between fabrication process and thermal distribution was evaluated by means of high resolution IR thermography in two 0.5 W MESFET structures, having the same layout but differing in the presence of via hole connections. The via hole structure allows a great improvement in device thermal...

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Bibliographic Details
Published inMicroelectronics and reliability Vol. 29; no. 4; pp. 499 - 504
Main Authors Canali, C., Chiussi, F., Donzelli, G., Magistrali, F., Merletti, M., Zanoni, E.
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 1989
Elsevier
Subjects
Applied sciences
Electronics
Exact sciences and technology
Other multijunction devices. Power transistors. Thyristors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Correlation between fabrication process and thermal distribution was evaluated by means of high resolution IR thermography in two 0.5 W MESFET structures, having the same layout but differing in the presence of via hole connections. The via hole structure allows a great improvement in device thermal behaviour, with decrease in R tk and more uniform thermal distribution. The effect of process variations, such as gate misalignments, on temperature distribution within the device active area was also evaluated.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0026-2714
1872-941X
DOI:10.1016/0026-2714(89)90333-8