A high-gain, low-noise 1/2- mu m pulse-doped pseudomorphic HEMT

• Published in: IEEE electron device letters Vol. 10; no. 11; pp. 511 - 513
• Main Authors: Huang, J.C., Zaitlin, M., Hoke, W., Adlerstein, M., Lyman, P., Saledas, P., Jackson, G., Tong, E., Flynn, G.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.11.1989; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Cutoff frequency; Electron mobility; Electronics; Exact sciences and technology; FETs; Fixtures; Gallium arsenide; HEMTs; Lithography; Molecular beam epitaxial growth; Optical buffering; PHEMTs; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Characterization; Gallium Arsenides; Field effect transistor; High electron mobility transistor; Epitaxy; Microwave; Manufacturing; Molecular jet
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/55.43120

A 1/2- mu m gate-length pulse-doped pseudomorphic high-electron-mobility transistor (HEMT) grown by MBE, which exhibits a current-gain cutoff frequency of 62 GHz, is discussed. The maximum available gain cutoff frequency was greater than 150 GHz. A minimum noise figure of 0.85 dB and associated gain of 14 dB were measured at 10 GHz. Tuned small-signal gain in a waveguide-to-microstrip test fixture at 44 GHz was 7.6 dB. When the HEMT was tuned for power, 260 mW/mm with 5-dB gain and 17% power-added efficiency were obtained at 44 GHz. These results suggest that a 1/2- mu m pseudomorphic HEMT is a viable candidate for Q-band applications.< >