Correlation between series resistance and parameters of Al/n-Si and Al/p-Si Schottky barrier diodes

• Published in: Applied surface science Vol. 236; no. 1-4; pp. 366 - 376
• Main Authors: Siad, M, Keffous, A, Mamma, S, Belkacem, Y, Menari, H
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.09.2004; Elsevier Science
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Ohmic contact; Physics; Schottky barrier; Series resistance; Silicon; α-Spectrometry; Silicon; Ohmic contact; Series resistance; α-Spectrometry; Schottky barrier; Electrical conductivity; Schottky barriers; CV characteristic; Bias voltage; Capacitance; Schottky barrier diodes; Ohmic contacts; Barrier height
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2004.05.009

The aim of this work is to experimentally investigate the effect of series resistance on the non-ideal silicon Schottky diode (SSD), in our process fabrication. Two types of diodes, with high resistivity silicon bulk, Al/n-Si and Al/p-Si have been prepared. The parameter RS, the ideality factor n and the barrier height φB0 are determined by performing different plots from the experimental forward bias current–voltage (I–V) and reverse bias capacitance–voltage (C–V) measurement. The high resistivity Schottky diode is currently used in nuclear detection, we tested these junctions in α particle spectrometry and measured their energy resolution.