Polarity dependent Al–Ti contacts to 6H–SiC

• Published in: Applied surface science Vol. 233; no. 1; pp. 360 - 365
• Main Authors: Veisz, Bernadett, Pécz, Béla
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 30.06.2004; Elsevier Science
• Subjects: Al–Ti contacts; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Physics; SiC; Solid phase reaction; Transmission electron microscopy; Al–Ti contacts; Solid phase reaction; Transmission electron microscopy; SiC; 68.37−d/68.37.Lp; 68.55.−a/68.55.Jk; Annealing; Inorganic compounds; Ternary compounds; Transition element compounds; Silicon carbides; Al-Ti contacts; Film growth; 68.37-d/68.37.Lp; Magnetrons; Cathode sputtering; 68.55.-a/68.55.Jk SiC; Preparation; Titanium carbides
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2004.03.253

In this paper, an Al–Ti contact preparation method is described on 6H–SiC wafers. The Al and Ti were both separately deposited and co-deposited onto Si→C polarized ( 0 0 0 1 ̄ ) C and C→Si polarized (0 0 0 1) Si faces of SiC substrate by dc magnetron sputtering. The samples were annealed at 1000 °C in N 2 atmosphere. The phase and morphology of the formed contacts were investigated by transmission electron microscopy. The formed contacts clearly showed polarity dependence on SiC substrate. When the SiC substrate was Si→C polarized the binary Al 3Ti phase generated. When it was C→Si polarized the ternary Ti 3SiC 2 formed along with the Al 3Ti resulting in a bilayered contact structure.