Unified apparent bandgap narrowing in n- and p-type silicon

In the literature, separate models exist for the apparent bandgap narrowing in n- and p-type Si, yielding a smaller bandgap narrowing in n-type than in p-type Si. Using a recently-published model, which describes both the majority and the minority carrier mobility, we have recalculated the apparent...

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Bibliographic Details
Published inSolid-state electronics Vol. 35; no. 2; pp. 125 - 129
Main Authors Klaassen, D.B.M., Slotboom, J.W., de Graaff, H.C.
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 01.02.1992
Elsevier Science
Subjects
Applied sciences
Electronics
Exact sciences and technology
Miscellaneous
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Monte Carlo method
Semiconductor device
Computer simulation
Theoretical study
Hydrodynamic model
Silicon
MOS transistor
Modeling
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Summary:In the literature, separate models exist for the apparent bandgap narrowing in n- and p-type Si, yielding a smaller bandgap narrowing in n-type than in p-type Si. Using a recently-published model, which describes both the majority and the minority carrier mobility, we have recalculated the apparent bandgap narrowing from the measurements upon which the bandgap narrowing models mentioned above are based. The results of this new interpretation show no difference in apparent bandgap narrowing in n- and p-type Si. A function describing the unified bandgap narrowing is presented.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(92)90051-D