Capacitor model for a floating gate EEPROM cell

• Published in: International journal of electronics Vol. 84; no. 6; pp. 561 - 581
• Main Authors: YANG, DAN, AXLEY, ROBERT S., DUEN HO, FAT
• Format: Journal Article
• Language: English
• Published: London Taylor & Francis Group 01.06.1998; Taylor & Francis
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Integrated circuits; Integrated circuits by function (including memories and processors); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Integrated circuits; ROM; EEPROM memory; Capacitors; Modeling; Equivalent circuits; Floating gate MOS transistor

This paper presents a transient simulation model of a floating gate EEPROM cell based on the capacitor equivalent circuit of the device. The model is compared with a capacitor equivalent circuit model previously presented in the literature. The model is used to simulate the write and erase cycle tun...