Influence of wetting layers on the electric potentials and optical properties of InGaN quantum dots

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Bibliographic Details
Published inSemiconductor science and technology Vol. 25; no. 11; p. 115015
Main Authors Hong, K B, Kuo, M K
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.11.2010
Institute of Physics
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Quantum dots
Thickness
Electric potential
Energy-level transitions
Energy gap
Gallium Indium Nitrides Mixed
Electronic structure
Excitons
Wetting
Quantum dots
Hamiltonians
Potential drop method
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/25/11/115015