Analysis of Photo-Generated Carrier Escape in Multiple Quantum Wells

Recent experiments have shown that more than 85% of photo-generated carriers can escape from multiple quantum wells (MQWs) sandwiched between p-type and n-type layers (PIN). In this work, we quantitatively analyze the relationship between the energy of carriers and the height of potential barriers t...

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Bibliographic Details
Published inCrystals (Basel) Vol. 13; no. 5; p. 834
Main Authors Guo, Jiaping, Liu, Weiye, Ding, Ding, Tan, Xinhui, Zhang, Wei, Han, Lili, Wang, Zhaowei, Gong, Weihua, Li, Jiyun, Zhai, Ruizhan, Jia, Zhongqing, Ma, Ziguang, Du, Chunhua, Jia, Haiqiang, Tang, Xiansheng
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 01.05.2023
Subjects
Chemical properties
Electric fields
Electric properties
Electricity
Energy
escape
Light
Materials research
Multi Quantum Wells
Optoelectronic devices
photo-generated carriers
Photoelectricity
Potential barriers
Principles
Quantum dots
Quantum wells
Semiconductors
Short circuits
Solid state physics
Thermal energy
uncertainty principle
Uncertainty principles
Velocity
China
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Summary:Recent experiments have shown that more than 85% of photo-generated carriers can escape from multiple quantum wells (MQWs) sandwiched between p-type and n-type layers (PIN). In this work, we quantitatively analyze the relationship between the energy of carriers and the height of potential barriers to be crossed, based on the GaAs/InGaAs quantum well structure system, combined with the Heisenberg uncertainty principle. It was found that that the energy obtained by electrons from photons is just enough for them to escape, and it was found that the energy obtained by the hole is just enough for it to escape due to the extra energy calculated, based on the uncertainty principle. This extra energy is considered to come from photo-generated thermal energy. The differential reflection spectrum of the structure is then measured by pump–probe technology to verify the assumption. The experiment shows that the photo-generated carrier has a longer lifetime in its short circuit (SC) state, and thus it possesses a lower structure temperature than that in open circuit (OC). This can only explain a thermal energy reduction caused by the continuous carrier escape in SC state, indicating an extra thermal energy transferred to the escaping carriers. This study is of great significance to the design of new optoelectronic devices and can improve the theory of photo-generated carrier transports.
ISSN:2073-4352
2073-4352
DOI:10.3390/cryst13050834