Study of threading dislocations in the plan-view sample of SiGe/Si(001) superlattices by transmission electron microscopy

• Published in: Journal of electronic materials Vol. 34; no. 5; pp. 612 - 616
• Main Author: ATICI, Yusuf
• Format: Journal Article
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 01.05.2005; Springer Nature B.V
• Subjects: Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Exact sciences and technology; Linear defects: dislocations, disclinations; Molecular beam epitaxy; Physics; Structure of solids and liquids; crystallography; Threading dislocations; Transmission electron microscopy; Inorganic compounds; Misfit dislocations; Scattering; Metastable states; Binary compounds; Experimental study; Thin films; Interfaces; Silicon Germanides; Stress relaxation; Transmission electron microscopy; Superlattices; Strained layer; Heterostructures
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-005-0073-x

Interfacial defects due to a mismatch of 1.378% between substrate and epi-layer were examined in a Si^sub 0.67^Ge^sub 0.33^/Si(001) superlattice by transmission electron microscopy (TEM). Plan-view specimens from the superlattice were prepared to investigate the defects in the structure. It was observed that 60°-type misfit dislocations associate with point contrast on and at their ends. This point contrast was found to represent threading dislocations by using tilt experiments in the microscope. Consequently, stereo electron microscopy was used to examine the threading dislocations. It was discovered that the threading dislocations are not on the {111} slip planes but can be almost parallel to the [001] zone axis. [PUBLICATION ABSTRACT] Key words: Threading dislocations, SiGe/Si(001) superlattices, transmission electron microscopy (TEM)