Electronic and optical properties of BAs under pressure

The electronic and optical properties of boron arsenide (BAs) in the zinc-blende (ZB) and rock-salt (RS) phases have been studied by the density functional theory (DFT) method based on the generalized gradient approximation (GGA). Using the enthalpy–pressure data, the structural phase transition fro...

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Published inPhysica. B, Condensed matter Vol. 406; no. 22; pp. 4272 - 4277
Main Authors Boudjemline, A., Islam, Mazharul M., Louail, L., Diawara, B.
Format Journal Article
LanguageEnglish
Published Kidlington Elsevier B.V 15.11.2011
Elsevier
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Summary:The electronic and optical properties of boron arsenide (BAs) in the zinc-blende (ZB) and rock-salt (RS) phases have been studied by the density functional theory (DFT) method based on the generalized gradient approximation (GGA). Using the enthalpy–pressure data, the structural phase transition from ZB to RS is observed at 141GPa. Our calculated electronic properties show that ZB-BAs is a semiconductor, whereas RS-BAs is a semi-metal. Calculations of the dielectric function and absorption coefficient have been performed for the energy range 0–30eV. The dependence of pressure on band structure and optical spectra is also investigated. The results are compared with available theoretical and experimental data.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2011.08.043