Polarization Characteristics of Quantum-Dot Vertical-Cavity Surface-Emitting Laser With Light Injection

• Published in: IEEE photonics technology letters Vol. 22; no. 3; pp. 179 - 181
• Main Authors: Peng-Chun Peng, Ruei-Long Lan, Fang-Ming Wu, Lin, G., Chun-Ting Lin, Chen, J., Gong-Ru Lin, Sien Chi, Hao-Chung Kuo, Chi, J.Y.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.02.2010; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Bragg reflectors; Conferences; Fiber optics; Gallium arsenide; High speed optical techniques; Molecular beam epitaxial growth; Molecular beam epitaxy; Optical distortion; Optical fibers; Optical polarization; Optical signal processing; Photonics; Quantum dots; Quantum dots (QDs); Surface emitting lasers; Threshold current; Vertical cavity surface emission lasers; Vertical cavity surface emitting lasers; vertical-cavity surface-emitting lasers (VCSELs)
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/LPT.2009.2037332

This investigation explores experimentally the optical characteristics of long-wavelength quantum-dot vertical-cavity surface-emitting lasers (QD VCSELs). The InAs QD VCSEL, fabricated on a GaAs substrate, is grown by molecular beam epitaxy with fully doped distributed Bragg reflectors. The optical characteristics of QD VCSEL without and with light injection are studied in detail. The QD VCSEL has the potential to be used in all-optical signal processing systems.