Bulk photovoltaic effect at infrared wavelength in strained Bi2Te3 films

As a prominent three-dimensional (3-D) topological insulator, traditional thermoelectric material Bi2Te3 has re-attracted greater interest in recent years. Herein, we demonstrate for the first time that c-axis oriented strained Bi2Te3 films exhibit the bulk photovoltaic effect (BPVE) at infrared wav...

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Bibliographic Details
Published inAPL materials Vol. 4; no. 12; pp. 126104 - 126104-8
Main Authors Liu, Yucong, Chen, Jiadong, Wang, Chao, Deng, Huiyong, Zhu, Da-Ming, Hu, Gujin, Chen, Xiaoshuang, Dai, Ning
Format Journal Article
LanguageEnglish
Published AIP Publishing LLC 01.12.2016
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Summary:As a prominent three-dimensional (3-D) topological insulator, traditional thermoelectric material Bi2Te3 has re-attracted greater interest in recent years. Herein, we demonstrate for the first time that c-axis oriented strained Bi2Te3 films exhibit the bulk photovoltaic effect (BPVE) at infrared wavelengths, which was only found in wide band-gap ferroelectric materials before. Moreover, further experiments show that the bulk photovoltaic effect probably comes from the flexoelectric effect which was induced by the stress gradient in strained Bi2Te3 films. And we anticipate that the results are generalizable to other layer-structured or two-dimensional (2-D) materials, e.g., Bi2Se3 and MoS2.
ISSN:2166-532X
2166-532X
DOI:10.1063/1.4971798