Low-Temperature Sintering of Bi(Ni0.5Ti0.5)O3-BiFeO3-Pb(Zr0.5Ti0.5)O3 Ceramics and Their Performance

• Published in: Materials Vol. 16; no. 9; p. 3459
• Main Authors: Wang, Wuyang, Wang, Shihao, Sun, Jun, Wang, Qiushi, Fang, Bijun
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 28.04.2023; MDPI
• Subjects: Bi(Ni0.5Ti0.5)O3 end component; Bismuth ferrite; Ceramics; Densification; electrical performance; Electrical resistivity; High temperature; Low temperature; Melting points; Perovskites; Point defects; Polyvinyl alcohol; relaxation behavior; Sintering; sintering aid; Sintering aids; sintering temperature; Temperature; Thermal conductivity; China; Japan
• ISSN: 1996-1944; 1996-1944
• DOI: 10.3390/ma16093459

A low-temperature sintering strategy was realized for preparing 0.21Bi(Ni0.5Ti0.5)O3-0.05BiFeO3-0.74Pb(Zr0.5Ti0.5)O3 (0.21BNT-0.05BF-0.74PZT) ceramics by conventional ceramic processing by adding low melting point BiFeO3 and additional sintering aid LiBO2. Pure perovskite 0.21BNT-0.05BF-0.74PZT ceramics are prepared at relatively low sintering temperatures, and their structure presents tetragonal distortion that is affected slightly by the sintering temperature. The 1030 °C sintered samples have high densification accompanied by relatively large grains. All ceramics have excellent dielectric performance with a relatively high temperature of dielectric constant maximum, and present an apparent relaxation characteristic. A narrow sintering temperature range exists in the 0.21BNT-0.05BF-0.74PZT system, and the 1030 °C sintered 0.21BNT-0.05BF-0.74PZT ceramics exhibit overall excellent electrical performance. The high-temperature conductivity can be attributed to the oxygen vacancies’ conduction produced by the evaporation of Pb and Bi during sintering revealed by energy dispersive X-ray measurement.