Flexible and Scalable Heterogeneous Integration of GaN HEMTs on Si‐CMOS by Micro‐Transfer‐Printing

• Published in: Physica status solidi. A, Applications and materials science Vol. 215; no. 8
• Main Authors: Lerner, Ralf, Eisenbrandt, Stefan, Fischer, Frank, Fecioru, Alin, Trindade, António Jośe, Bonafede, Salvatore, Bower, Christopher, Waltereit, Patrick, Reiner, Richard, Czap, Heiko
• Format: Journal Article
• Language: English
• Published: Weinheim Wiley Subscription Services, Inc 21.04.2018
• Subjects: Breakdown; CMOS; Design of experiments; Electric potential; Electron mobility; Electronic systems; Energy conservation; Energy conversion efficiency; gallium‐nitride HEMT; heterogeneous integration; High electron mobility transistors; micro‐Transfer‐Printing; Parameters; Printing; Semiconductor devices; Silicon; silicon CMOS
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.201700556

Tomorrow's power electronic systems require cost‐saving and more efficient power conversion solutions. The heterogeneous integration of GaN‐based high electron mobility transistors (HEMTs) together with silicon CMOS by micro‐Transfer‐Printing could be a key technology for this. It enables the integration of highly integrated mature CMOS logic functionality with fast GaN HEMT output drivers with very low on‐state and switching losses. The scalability by design measures of the printed HEMT is investigated in terms of drain‐to‐gate spacing and channel width defining breakdown voltage and area‐related parameters like on‐resistance. The design flexibility of the micro‐Transfer‐Printing by printing the HEMTs on top of the CMOS devices without restrictive design rule limits is investigated by CMOS DC parameter comparison and thermal TCAD Design Of Experiment (DOE) study. No electrical or thermal functional limitation of printing the HEMTs directly on top of the CMOS dielectric layer stack was found. This enables the usage of the isolation capabilities of the CMOS dielectric layer stack to enhance the HEMT breakdown voltage. Example of a printed GaN high electron mobility transistor (HEMT) on a silicon CMOS wafer with subsequent on‐wafer metallization. Micro‐Transfer‐Printing enables the integration of CMOS logic functionality with fast GaN HEMT output drivers with very low on‐state and switching losses, thus providing a technology for cost‐saving and more efficient power conversion solutions in future power electronic systems.