Photovoltaic junctions between indium tin oxide and silicon

• Published in: Thin solid films Vol. 149; no. 3; pp. 283 - 290
• Main Authors: Amirhaghi, S, Mudrik, M, Ulman, R, Harzion, Z, Croitoru, N
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 08.06.1987; Elsevier Science
• Subjects: Applied sciences; Energy; Exact sciences and technology; Natural energy; Solar energy; Solar thermal conversion; Solar cell; Indium Tin Oxides; Solar energy; Junction; Trap; Silicon; Manufacturing; Performance; Electrical characteristic; Neutralization; Passivation
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/0040-6090(87)90391-9

Photovoltaic junctions solar cells were made between indium tin oxide (ITO) and polycrystalline p-Si (poly-Si), or between ITO and single-crystal p-Si. A model based on the assumption that the grain boundaries in poly-Si introduce ionized energy states equivalent to an effective doping density is considered. The cell performance was calculated from current-voltage characteristics and capacitance-voltage measurements at various frequencies. From transient photovoltage decay measurements, an effective lifetime τ eff of (300–400) × 10 −9 s was found in the poly-Si/ITO junction, whereas in the single-crystal-Si/ITO junction τ eff was 5 μs. The shorter lifetime of the injected carriers is one of the reasons for the lower conversion efficiency of these cells. Prior to ITO deposition, iodine ions were introduced to neutralize the trap states at the surface of the single-crystal silicon and to neutralize the traps at both the surface and grain boundaries of the poly-Si. An increase in the open-circuit voltage factor was observed.