Lateral transport in GaAs-(Al,Ga)As superlattices investigated by transient grating measurements

The recombination lifetime and the lateral diffusion coefficient for free carrier motion parallel to the interfaces at room temperature were measured by the transient grating technique. Two GaAs-Ga 1-xAl xAs superlattices with nearly identical quantum well thickness but different barrier properties...

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Bibliographic Details
Published inSolid state communications Vol. 81; no. 6; pp. 467 - 471
Main Authors Weinert, H., Kolenda, J., Petrauskas, M.
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 1992
Elsevier
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Physics
Gallium Arsenides
Transport process
Quantum well
Semiconductor materials
Charge carrier mobility
Aluminium Gallium Arsenides Mixed
Experimental study
Superlattice
Inorganic compound
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Summary:The recombination lifetime and the lateral diffusion coefficient for free carrier motion parallel to the interfaces at room temperature were measured by the transient grating technique. Two GaAs-Ga 1-xAl xAs superlattices with nearly identical quantum well thickness but different barrier properties were investigated. It was found that the lateral mobility of free carriers decreases with decreasing tunneling probability through the barriers.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(92)90594-Y