Ion beam synthesis of buried and surface nickel silicides during a single implantation step

• Published in: Applied surface science Vol. 73; pp. 246 - 252
• Main Authors: Wu, M.F., De Wachter, J., Pattyn, H., Van Bavel, A.-M., Langouche, G., Vanhellemont, J., Bender, H., Maenhoudt, M., Bruynseraede, Y.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.11.1993; Elsevier Science
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Defects and impurities in crystals; microstructure; Doping and impurity implantation in germanium and silicon; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Structure of solids and liquids; crystallography; Crystal growth; Ion implantation; Annealing; Inorganic compounds; Cobalt silicides; Ternary compounds; Transition element compounds; Nickel silicides; Experimental study; Thin films; Quantity ratio; Temperature effects; Diffusion; Depth profiles

An unusual Ni distribution with two completely separated buried and surface silicide layers has been observed after Ni ion implantation in Si(111) kept at a temperature of 300°C, with a dose of 1.1 × 10 17/cm 2 and at a fixed energy of 90 keV. The Ni profile and its substrate temperature dependence,...