Ion beam synthesis of buried and surface nickel silicides during a single implantation step

• Published in: Applied surface science Vol. 73; pp. 246 - 252
• Main Authors: Wu, M.F., De Wachter, J., Pattyn, H., Van Bavel, A.-M., Langouche, G., Vanhellemont, J., Bender, H., Maenhoudt, M., Bruynseraede, Y.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.11.1993; Elsevier Science
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Defects and impurities in crystals; microstructure; Doping and impurity implantation in germanium and silicon; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Structure of solids and liquids; crystallography; Crystal growth; Ion implantation; Annealing; Inorganic compounds; Cobalt silicides; Ternary compounds; Transition element compounds; Nickel silicides; Experimental study; Thin films; Quantity ratio; Temperature effects; Diffusion; Depth profiles
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/0169-4332(93)90174-A

An unusual Ni distribution with two completely separated buried and surface silicide layers has been observed after Ni ion implantation in Si(111) kept at a temperature of 300°C, with a dose of 1.1 × 10 17/cm 2 and at a fixed energy of 90 keV. The Ni profile and its substrate temperature dependence, its dose dependence and the influence from the preceding Co implantation were studied by RBS, AES and TEM. A model based on the diffusion of the transition metal, defect annealing during the implantation, and the gettering power of the surface and the end-of-range defects is presented.