Elastic modulus of and residual stresses in diamond films
Diamond thin films were prepared using microwave-enhanced chemical vapor deposition techniques with different concentration ratios of CH4 to H2 at temperatures of 800 °C and 900 °C. The elastic modulus of the films varies non-linearly with the change in the ratio of CH4 to H2, and is not significant...
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Published in | Thin solid films Vol. 260; no. 1; pp. 118 - 123 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Lausanne
Elsevier B.V
01.05.1995
Elsevier Science |
Subjects | |
Online Access | Get full text |
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Summary: | Diamond thin films were prepared using microwave-enhanced chemical vapor deposition techniques with different concentration ratios of CH4 to H2 at temperatures of 800 °C and 900 °C. The elastic modulus of the films varies non-linearly with the change in the ratio of CH4 to H2, and is not significantly affected by changes in the process temperature. Compressive and tensile residual stresses develop in the films prepared at 800 °C and 900 °C, respectively. The magnitude of the stresses is a function of the CH4H2 ratio. An analysis of Raman spectra reveals that the quality of the films is influenced by the CH4H2 ratio. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/0040-6090(94)06457-1 |