Elastic modulus of and residual stresses in diamond films

Diamond thin films were prepared using microwave-enhanced chemical vapor deposition techniques with different concentration ratios of CH4 to H2 at temperatures of 800 °C and 900 °C. The elastic modulus of the films varies non-linearly with the change in the ratio of CH4 to H2, and is not significant...

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Bibliographic Details
Published inThin solid films Vol. 260; no. 1; pp. 118 - 123
Main Authors Chiu, Chin-Chen, Liou, Yung, Yung-Der, Juang
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier B.V 01.05.1995
Elsevier Science
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Summary:Diamond thin films were prepared using microwave-enhanced chemical vapor deposition techniques with different concentration ratios of CH4 to H2 at temperatures of 800 °C and 900 °C. The elastic modulus of the films varies non-linearly with the change in the ratio of CH4 to H2, and is not significantly affected by changes in the process temperature. Compressive and tensile residual stresses develop in the films prepared at 800 °C and 900 °C, respectively. The magnitude of the stresses is a function of the CH4H2 ratio. An analysis of Raman spectra reveals that the quality of the films is influenced by the CH4H2 ratio.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(94)06457-1