Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

The reliability and output power of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) fabricated on AlN substrates prepared by hydride vapor phase epitaxy are reported. TEM analysis revealed that dislocation density in LED layers, except the p-GaN layer, was below $10^{6}$ cm -2 . DUV-LE...

Full description

Saved in:
Bibliographic Details
Published inApplied physics express Vol. 6; no. 9; pp. 092103 - 092103-3
Main Authors Kinoshita, Toru, Obata, Toshiyuki, Nagashima, Toru, Yanagi, Hiroyuki, Moody, Baxter, Mita, Seiji, Inoue, Shin-ichiro, Kumagai, Yoshinao, Koukitu, Akinori, Sitar, Zlatko
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.09.2013
Online AccessGet full text

Cover

More Information
Summary:The reliability and output power of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) fabricated on AlN substrates prepared by hydride vapor phase epitaxy are reported. TEM analysis revealed that dislocation density in LED layers, except the p-GaN layer, was below $10^{6}$ cm -2 . DUV-LEDs emitting at 261 nm exhibited an output power of 10.8 mW at 150 mA. The lifetime of these LEDs was estimated to be over 10,000 h for cw operation at 50 mA. No significant acceleration of output power decay at higher operation currents was observed. The estimated lifetime at the operation current of 150 mA was over 5,000 h.
Bibliography:Cross-sectional TEM image of DUV-LED structure on an HVPE-AlN substrate. (a) EL spectra of DUV-LED device taken through the HVPE-AlN substrate under various dc operation currents and (b) output power and EQE as a function of dc operation current. $I$--$V$ characteristics of flip-chip mounted LED device under forward and reverse bias. Output power decay of 261 nm DUV-LEDs driven at 50 and 150 mA.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.6.092103