A comprehensive analytical model for metal-insulator-semiconductor (MIS) devices: a solar cell application

• Published in: IEEE transactions on electron devices Vol. 40; no. 8; pp. 1446 - 1454
• Main Authors: Doghish, M.Y., Ho, F.D.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.08.1993; Institute of Electrical and Electronics Engineers
• Subjects: 140501 - Solar Energy Conversion- Photovoltaic Conversion; Analytical models; ANALYTICAL SOLUTION; Applied sciences; Bandwidth; CHALCOGENIDES; Charge carrier processes; CRYSTAL DOPING; DIMENSIONS; DIRECT ENERGY CONVERTERS; Electronics; Electrons; Energy states; Exact sciences and technology; FUNCTIONS; MATHEMATICAL MODELS; Metal-insulator structures; MIS SOLAR CELLS; Optoelectronic devices; OXIDES; OXYGEN COMPOUNDS; PERMITTIVITY; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductor process modeling; SILICON COMPOUNDS; SILICON OXIDES; SOLAR CELLS; SOLAR ENERGY; SOLAR EQUIPMENT; Substrates; THICKNESS; Tunneling; WORK FUNCTIONS; Solar cell; Parametric method; MIS structure; Modeling; Electrical characteristic
• ISSN: 0018-9383; 0025-5408; 1557-9646; 1873-4227
• DOI: 10.1109/16.223704

As an application of the authors previous model for MIS (metal-insulator-semiconductor) devices, a detailed model for MIS solar cells has been developed that covers a wide range of parameters, including surface states, silicon dioxide thickness, substrate doping, fixed oxide charges, substrate thickness, and metal work function. It also takes the nonequilibrium conditions into consideration. The effects of using the actual permittivity and barrier height of thin oxide are discussed.< >