Spin-polarized electron tunneling: The importance of the potential barrier shape

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Vol. 31; no. 1; pp. 65 - 68
• Main Author: Alvarado, S.F.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.04.1995; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Gallium arsenide; Nickel; Physics; Spin-polarized electron states; Surface and interface electron states; Surface states, band structure, electron density of states; Tunnelling; Tunnelling; Nickel; Spin-polarized electron states; Gallium arsenide; Potential barrier; Gallium arsenides; Tunnel effect; Surface phenomenon; Surface electron state; Electron state; Theoretical study; Spin polarization
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/0921-5107(94)08008-9

Aspects concerning the shape of the potential barrier for the tunneling of spin-polarized electrons through a vacuum are discussed, and STM measurements indicating that the spin polarization increases with decreasing potential barrier thickness are presented. Model calculations of the potential barrier allow critical parameters of the potential barrier to be determined, namely the height φ B and the position z m of the energy maximum. Variations in these parameters correlate with the magnitude of the tunneling electron spin polarization.