Ternary and quaternary metal chalcogenide nanocrystals: synthesis, properties and applications
We review the field of multinary metal chalcogenide nanocrystals, which has gained strongly increasing interest in the quest for novel narrow band gap semiconductors. Small (2-4 nm) CuInS sub(2) and CuInSe sub(2) nanocrystals, for example, exhibit size dependent luminescence in the visible and near...
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Published in | Journal of materials chemistry. C, Materials for optical and electronic devices Vol. 1; no. 24; pp. 3756 - 3776 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Royal Society of Chemistry
01.01.2013
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Subjects | |
Online Access | Get full text |
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Summary: | We review the field of multinary metal chalcogenide nanocrystals, which has gained strongly increasing interest in the quest for novel narrow band gap semiconductors. Small (2-4 nm) CuInS sub(2) and CuInSe sub(2) nanocrystals, for example, exhibit size dependent luminescence in the visible and near infrared range. Their quantum yield can exceed 50% after growth of a ZnS shell, which makes them appealing emitters for lighting, displaying and biological imaging applications. Cu sub(2)ZnSnS sub(4) (CZTS) nanocrystals, on the other hand, can be used as solution processed absorbing materials in thin film solar cells showing high power conversion efficiencies (currently around 8-10%). These examples illustrate that multinary metal chalcogenide nanocrystals have high potential for replacing classical cadmium and lead chalcogenide quantum dots in many fields. We give an overview of the chemical synthesis methods of the different systems reported to date, classifying them according to the obtained crystal structure. Next, we discuss their photophysical properties and give a brief description of the main fields of application. Finally, we conclude by outlining current challenges and related future directions of this exponentially growing domain. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 2050-7526 2050-7534 |
DOI: | 10.1039/c3tc30273c |