Inch-Size Solution-Processed Single-Crystalline Films of High-Mobility Organic Semiconductors

A method for continuously growing large-domain organic semiconductor crystals is developed to fabricate multi-array high-mobility organic transistors. An organic semiconductor solution is held at the edge of a moving blade to grow a large-area crystalline thin film. The continuous evaporation of the...

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Published inApplied physics express Vol. 6; no. 7; pp. 076503 - 076503-4
Main Authors Soeda, Junshi, Uemura, Takafumi, Okamoto, Toshihiro, Mitsui, Chikahiko, Yamagishi, Masakazu, Takeya, Jun
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.07.2013
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Summary:A method for continuously growing large-domain organic semiconductor crystals is developed to fabricate multi-array high-mobility organic transistors. An organic semiconductor solution is held at the edge of a moving blade to grow a large-area crystalline thin film. The continuous evaporation of the solvent at around 100 °C, while the solution is supplied at the same rate, allows the organic crystals to grow steadily on the substrate to several inches in size. The performance of the arrays of field-effect transistors based on the large-domain crystal films is excellent, with mobility of 5--10 cm 2 V -1 s -1 .
Bibliography:(a) Molecular structure of C10-DNBDT. (b) Schematic illustration of equipment for large-domain crystal growth. (a) Optical microscopy image of the single-crystalline C10-DNBDT thin films. (b, c) Cross-polarized light micrograph of the C10-DNBDT single crystal. The direction of the polarizer (P) and analyzer (A) are indicated by yellow arrows. (d, e) Cross-polarized light micrograph of the whole C10-DNBDT single crystal. White arrows indicate the direction of crystal growth. (a, b) Crystal structure of C10-DNBDT along the (a) $a^{*}$-axis and (b) $b^{*}$-axis. (c, d) Imaging-plate images for the transmission-XRD measurements with the X-rays (c) perpendicular to the substrate and (d) parallel to the substrate. (e) Optical configuration for in-plane GIXD measurements. (f) XRD pattern of the $\varphi$-scan for the (020) peak. In this plot, 0° corresponds to the crystal growth direction. The X-ray incident angle was 0.180°. (a, b) Typical transfer characteristics of the C10-DNBDT single-crystalline TFTs in the (a) linear region and (b) saturation region. (c) Output characteristics of the single-crystalline TFTs. (d) Optical microscopy image of the $5\times 5$ TFT array on the C10-DNBDT single-crystalline thin film. (e) All the transfer characteristics for the $5\times 5$ arrayed transistors are plotted together.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.6.076503