High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

A boundary-temperature-controlled epitaxy, where the growth temperature of InN is controlled at its maximum, is used to obtain high-electron-mobility InN layers on sapphire substrates by molecular beam epitaxy. The Hall-effect measurement shows a recorded electron mobility of 3280 cm 2 V -1 s -1 and...

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Published inApplied physics express Vol. 5; no. 1; pp. 015502 - 015502-3
Main Authors Wang, Xinqiang, Liu, Shitao, Ma, Nan, Feng, Li, Chen, Guang, Xu, Fujun, Tang, Ning, Huang, Sen, Chen, Kevin J, Zhou, Shengqiang, Shen, Bo
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.01.2012
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Abstract A boundary-temperature-controlled epitaxy, where the growth temperature of InN is controlled at its maximum, is used to obtain high-electron-mobility InN layers on sapphire substrates by molecular beam epitaxy. The Hall-effect measurement shows a recorded electron mobility of 3280 cm 2 V -1 s -1 and a residual electron concentration of $1.47\times 10^{17}$ cm -3 at room temperature. The enhanced electron mobility and reduced residual electron concentration are mainly due to the reduction of threading dislocation density. The obtained Hall mobilities are in good agreement with the theoretical modelling by the ensemble Monte Carlo simulation.
AbstractList A boundary-temperature-controlled epitaxy, where the growth temperature of InN is controlled at its maximum, is used to obtain high-electron-mobility InN layers on sapphire substrates by molecular beam epitaxy. The Hall-effect measurement shows a recorded electron mobility of 3280 cm 2 V -1 s -1 and a residual electron concentration of $1.47\times 10^{17}$ cm -3 at room temperature. The enhanced electron mobility and reduced residual electron concentration are mainly due to the reduction of threading dislocation density. The obtained Hall mobilities are in good agreement with the theoretical modelling by the ensemble Monte Carlo simulation.
Author Ma, Nan
Wang, Xinqiang
Chen, Guang
Feng, Li
Zhou, Shengqiang
Huang, Sen
Liu, Shitao
Tang, Ning
Shen, Bo
Xu, Fujun
Chen, Kevin J
Author_xml – sequence: 1
  givenname: Xinqiang
  surname: Wang
  fullname: Wang, Xinqiang
  organization: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
– sequence: 2
  givenname: Shitao
  surname: Liu
  fullname: Liu, Shitao
  organization: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
– sequence: 3
  givenname: Nan
  surname: Ma
  fullname: Ma, Nan
  organization: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
– sequence: 4
  givenname: Li
  surname: Feng
  fullname: Feng, Li
  organization: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
– sequence: 5
  givenname: Guang
  surname: Chen
  fullname: Chen, Guang
  organization: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
– sequence: 6
  givenname: Fujun
  surname: Xu
  fullname: Xu, Fujun
  organization: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
– sequence: 7
  givenname: Ning
  surname: Tang
  fullname: Tang, Ning
  organization: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
– sequence: 8
  givenname: Sen
  surname: Huang
  fullname: Huang, Sen
  organization: Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
– sequence: 9
  givenname: Kevin J
  surname: Chen
  fullname: Chen, Kevin J
  organization: Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
– sequence: 10
  givenname: Shengqiang
  surname: Zhou
  fullname: Zhou, Shengqiang
  organization: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), 01314 Dresden, Germany
– sequence: 11
  givenname: Bo
  surname: Shen
  fullname: Shen, Bo
  organization: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
BookMark eNqFkL1PwzAQxS1UJNrCyJ6VwcWOY8cZSxTaSuFDqEhskWM7YJTakZMK8t-TKIgBCTHdDe93995bgJl1VgNwidEK44hcrx-zlxVdIUwpCk_AHHMeQhRzNvvZY34GFm37jhCLCGZz8LQ1r28wq7XsvLPwzpWmNl0f7Ox9kIte-zbYePdhg7IPbtzRKuF7uNeHRnvRHb2GqbMDWddaBVljOvHZn4PTStStvvieS_B8m-3TLcwfNrt0nUNJWNTBRCOWIMUkpxGjlWJlzBSNJFIlpiXTCUZIlJUKOWVUSExFrEMiWViFRCQUkyWA013pXdt6XRWNN4fBX4FRMRZSjIUUtJgKGfTkl14OfjszBhCm_pO6mijTiOafD1_PfHMl
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ContentType Journal Article
DBID AAYXX
CITATION
DOI 10.1143/APEX.5.015502
DatabaseName CrossRef
DatabaseTitle CrossRef
DatabaseTitleList
DeliveryMethod fulltext_linktorsrc
Discipline Physics
EISSN 1882-0786
EndPage 015502-3
ExternalDocumentID 10_1143_APEX_5_015502
GroupedDBID 23M
4.4
5GY
AAGCD
AAGID
AAJIO
AALHV
AAPBV
ABEFU
ACGFS
ACNCT
AEFHF
AENEX
AFYNE
ALMA_UNASSIGNED_HOLDINGS
ASPBG
ATQHT
AVWKF
AZFZN
B.R
CJUJL
CS3
EBS
EJD
IIPPG
IOP
IZVLO
KOT
LI
MC8
N5L
P2P
QTG
RIN
RNS
ROL
RW3
SJN
UPT
X
XFK
ZE2
-~X
6OB
AATNI
AAYXX
ABCXL
ABHWH
ABJNI
ABVAM
ACHIP
ADIYS
ADWVK
AERVB
AFFNX
AI.
AKPSB
AOAED
CEBXE
CITATION
CRLBU
GROUPED_DOAJ
IJHAN
JCGBZ
O3W
PJBAE
RPA
VH1
ZOHVM
ID FETCH-LOGICAL-c364t-9e0690d6c85465fd6b76d54c0db15b6e9100abfd28565ac15a7e23c62f23a9513
ISSN 1882-0778
IngestDate Thu Apr 24 23:11:03 EDT 2025
Tue Jul 01 02:56:03 EDT 2025
Mon Jan 18 10:57:31 EST 2021
IsPeerReviewed true
IsScholarly true
Issue 1
Language English
LinkModel OpenURL
MergedId FETCHMERGED-LOGICAL-c364t-9e0690d6c85465fd6b76d54c0db15b6e9100abfd28565ac15a7e23c62f23a9513
Notes Growth rate of InN as a function of growth temperature. Schematic of boundary-temperature-controlled epitaxy is shown in the inset, where the thermocouple temperature is decreased step by step from 500--480 °C. (a) Directly measured Hall mobility (diamonds) and residual electron concentration (circles) of InN layers as functions of layer thickness. Lines serve as guides for the eyes. (b) Temperature-dependent mobilities and electron concentrations, where the solid squares are directly measured values and the solid triangles are extracted values for the InN bulk layer. The temperature-dependent mobility calculated by EMC is shown by the solid line. The fitting line for the temperature-dependent electron concentration in the bulk layer is shown in the inset by the solid line. Calculated low-field electron mobility in InN as a function of ionized impurity concentration at different dislocation density ($N_{\text{dis}}$ in the figure) levels. The experimental results are shown by the bigger open diamonds. FWHMs of $\omega$-rocking curves of (002) symmetric and (102) asymmetric planes of InN layers.
ParticipantIDs crossref_primary_10_1143_APEX_5_015502
crossref_citationtrail_10_1143_APEX_5_015502
ipap_primary_10_1143_APEX_5_015502
ProviderPackageCode CITATION
AAYXX
PublicationCentury 2000
PublicationDate 2012-01-01
PublicationDateYYYYMMDD 2012-01-01
PublicationDate_xml – month: 01
  year: 2012
  text: 2012-01-01
  day: 01
PublicationDecade 2010
PublicationTitle Applied physics express
PublicationYear 2012
Publisher The Japan Society of Applied Physics
Publisher_xml – name: The Japan Society of Applied Physics
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SSID ssj0064316
Score 2.2720132
Snippet A boundary-temperature-controlled epitaxy, where the growth temperature of InN is controlled at its maximum, is used to obtain high-electron-mobility InN...
SourceID crossref
ipap
SourceType Enrichment Source
Index Database
Publisher
StartPage 015502
Title High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy
Volume 5
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV3dT9swELdGJyRe0NhAfGwomhAvwyV1Ert5ZFURmviopiL1LbIdByqhtEAR6_567uwk_aBjwEsUWbar5n69_Hy9-x0he4Y1VWy0onEaSRrKBtwBsaCcicyXXPtcYkD_7JyfXIa_elFvrrpkpOr678K6kvdYFcbArlgl-wbLVpvCANyDfeEKFobrq2yMSRq0XTSyoWcDm-g6ht_8-Y9TiVwaQ0uPOVLMn7Z90t2Ydg0QZSekTFsuT_0GSGcbu4f8mfmPtySoLvhxj80AqnwNG4J3bqLXz28BY1dVak__wYZUr2HDwSTgXbjyCfV0q0_703EHm8BRxh2cq0Ru7gvXgKdupscKcevCv0bPYOR8JR6O2GIvHlo1iU67V0dR1XLerFr23Fusyi10ldZBgsuTKHHLl8hHBucIW-F50Slf1Rx1APBEXn6VUoQ1DA5nPn2GtNT6QzmcIiHdT2S1OD14Rw4Ka-SDyT-T5Y4z0BfyezEgPACE5wDhWUB4auz9BxBeAYh1cnnc7rZOaNE0g-qAhyMaG9SeTrluYpv7LOVK8DQKtZ-qRqS4AXroS5WlrAlUXupGJIVhgeYsY4EEuh1skFo-yM0m8YQR0s8Ea2ggzXEgmxL2jpjQsVCoUbRFDsqnkuhCUR4bm9wkC22wRfar6UMnpfKvid_xEb88afu1u-2QlQl8v5La6O7BfAMiOVK7FgxPGShuug
linkProvider IOP Publishing
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=High-Electron-Mobility+InN+Layers+Grown+by+Boundary-Temperature-Controlled+Epitaxy&rft.jtitle=Applied+physics+express&rft.au=Wang%2C+Xinqiang&rft.au=Liu%2C+Shitao&rft.au=Ma%2C+Nan&rft.au=Feng%2C+Li&rft.date=2012-01-01&rft.issn=1882-0778&rft.eissn=1882-0786&rft.volume=5&rft.issue=1&rft.spage=15502&rft_id=info:doi/10.1143%2FAPEX.5.015502&rft.externalDBID=n%2Fa&rft.externalDocID=10_1143_APEX_5_015502
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1882-0778&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1882-0778&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1882-0778&client=summon