High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

A boundary-temperature-controlled epitaxy, where the growth temperature of InN is controlled at its maximum, is used to obtain high-electron-mobility InN layers on sapphire substrates by molecular beam epitaxy. The Hall-effect measurement shows a recorded electron mobility of 3280 cm 2 V -1 s -1 and...

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Published inApplied physics express Vol. 5; no. 1; pp. 015502 - 015502-3
Main Authors Wang, Xinqiang, Liu, Shitao, Ma, Nan, Feng, Li, Chen, Guang, Xu, Fujun, Tang, Ning, Huang, Sen, Chen, Kevin J, Zhou, Shengqiang, Shen, Bo
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.01.2012
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Summary:A boundary-temperature-controlled epitaxy, where the growth temperature of InN is controlled at its maximum, is used to obtain high-electron-mobility InN layers on sapphire substrates by molecular beam epitaxy. The Hall-effect measurement shows a recorded electron mobility of 3280 cm 2 V -1 s -1 and a residual electron concentration of $1.47\times 10^{17}$ cm -3 at room temperature. The enhanced electron mobility and reduced residual electron concentration are mainly due to the reduction of threading dislocation density. The obtained Hall mobilities are in good agreement with the theoretical modelling by the ensemble Monte Carlo simulation.
Bibliography:Growth rate of InN as a function of growth temperature. Schematic of boundary-temperature-controlled epitaxy is shown in the inset, where the thermocouple temperature is decreased step by step from 500--480 °C. (a) Directly measured Hall mobility (diamonds) and residual electron concentration (circles) of InN layers as functions of layer thickness. Lines serve as guides for the eyes. (b) Temperature-dependent mobilities and electron concentrations, where the solid squares are directly measured values and the solid triangles are extracted values for the InN bulk layer. The temperature-dependent mobility calculated by EMC is shown by the solid line. The fitting line for the temperature-dependent electron concentration in the bulk layer is shown in the inset by the solid line. Calculated low-field electron mobility in InN as a function of ionized impurity concentration at different dislocation density ($N_{\text{dis}}$ in the figure) levels. The experimental results are shown by the bigger open diamonds. FWHMs of $\omega$-rocking curves of (002) symmetric and (102) asymmetric planes of InN layers.
ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.5.015502