High-speed, high-current-gain p-n-p InP/InGaAs heterojunction bipolar transistors

p-n-p InP/InGaAs heterojunction bipolar transistors (HBTs) are reported for the first time. The transistors, grown by metal organic molecular beam epitaxy (MOMBE), exhibited maximum DC current gain values up to 420 for a base doping level of 4*10/sup 18/ cm/sup -3/. Small-signal measurements on self...

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Bibliographic Details
Published inIEEE electron device letters Vol. 14; no. 1; pp. 19 - 21
Main Authors Lunardi, L.M., Chandrasekhar, S., Hamm, R.A.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.01.1993
Institute of Electrical and Electronics Engineers
Subjects
426000 - Engineering- Components, Electron Devices & Circuits- (1990-)
AMPLIFICATION
Applied sciences
Area measurement
ARSENIC COMPOUNDS
ARSENIDES
Cutoff frequency
DESIGN
Doping
ELECTRICAL PROPERTIES
Electronics
ENGINEERING
EPITAXY
Exact sciences and technology
FABRICATION
FEASIBILITY STUDIES
Frequency measurement
GAIN
Gain measurement
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
Heterojunction bipolar transistors
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
Indium gallium arsenide
Indium phosphide
INDIUM PHOSPHIDES
Integrated circuit measurements
JUNCTION TRANSISTORS
JUNCTIONS
Molecular beam epitaxial growth
MOLECULAR BEAM EPITAXY
OPERATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SEMICONDUCTOR JUNCTIONS
TRANSISTORS
Cut off frequency
Measurement
Voltage current curve
Indium Phosphides
Indium Gallium Arsenides Mixed
Heterojunction transistor
n channel
Current gain
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Summary:p-n-p InP/InGaAs heterojunction bipolar transistors (HBTs) are reported for the first time. The transistors, grown by metal organic molecular beam epitaxy (MOMBE), exhibited maximum DC current gain values up to 420 for a base doping level of 4*10/sup 18/ cm/sup -3/. Small-signal measurements on self-aligned transistors with 3- mu m*8- mu m emitter area indicated the unity gain cutoff frequency value of 10.5 GHz and the inferred maximum frequency of oscillation of 25 GHz. The results clearly demonstrate the feasibility of complementary integrated circuits in the InP material system.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/55.215087