Field-assisted ion exchange for the detection of localized defects in thin films on glass substrates

A method of field-assisted Ag +Na + ion exchange has been proposed for the determination of the number of localized defects behaving as piercing micro-openings in thin metal, semiconductor and insulator films deposited on glass substrates. The revealed defects have been observed using an interferen...

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Bibliographic Details
Published inThin solid films Vol. 161; no. 1-2; pp. 85 - 91
Main Authors Pantchev, B.G., Danesh, P.
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier B.V 01.07.1988
Elsevier Science
Subjects
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Interference microscopy
Semiconductor materials
Investigation method
Insulating material
Metal
Silicon IV Oxides
Crystal defect
Ion exchange
Experimental study
Inorganic compound
Thin film
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Summary:A method of field-assisted Ag +Na + ion exchange has been proposed for the determination of the number of localized defects behaving as piercing micro-openings in thin metal, semiconductor and insulator films deposited on glass substrates. The revealed defects have been observed using an interference microscope. The capabilities of the method have been demonstrated by its application to SiO 2 and some metal films.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(88)90238-6