Indium-doped CdS film on p-type silicon: An efficient heterojunction solar cell

An extensive study is presented on photovoltaic devices fabricated by the vacuum deposition of indium-doped CdS films onto p-type silicon substrates. Detailed investigations are reported of the electrical and photoelectric characteristics of these devices, of their dependence on the indium content o...

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Bibliographic Details
Published inSolar cells Vol. 10; no. 1; pp. 17 - 32
Main Authors Scafé, E., Maletta, G., Tomaciello, R., Alessandrini, P., Camanzi, A., De Angelis, L., Galluzzi, F.
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier B.V 01.01.1983
Elsevier Sequoia
Subjects
Applied sciences
Energy
Exact sciences and technology
Natural energy
Solar energy
Solar cell
Equipment
Characteristics
Preparation
Doping
Solar energy
Italy
Silicon
Cadmium Sulfides
Experimental study
Indium
Vacuum deposition
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Summary:An extensive study is presented on photovoltaic devices fabricated by the vacuum deposition of indium-doped CdS films onto p-type silicon substrates. Detailed investigations are reported of the electrical and photoelectric characteristics of these devices, of their dependence on the indium content of the window material and of the role of interfacial oxide layers. New results on the photovoltaic performance are also reported, showing that air mass 1 efficiencies higher than 11% and 9% can be reached on single-crystal and semicrystalline silicon substrates respectively, without using a back-surface field and antireflection coating. Possible improvements in cell efficiency are also discussed.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0379-6787
1878-2655
DOI:10.1016/0379-6787(83)90004-2