Efficient method for numerical modeling of thermal redistribution of interacting impurities under oxidizing ambient

An efficient finite-difference algorithm for simulating the diffusion of several interacting impurities is proposed. Segregation at the moving Si/SiO 2 interface is taken into account. The algorithm consumes less CPU time than those based on coordinate transformation or finite-element technique, and...

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Bibliographic Details
Published inSolid-state electronics Vol. 35; no. 10; pp. 1549 - 1552
Main Authors Alexandrov, A.L, Obrecht, M.S, Gadiyak, G.V
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 1992
Elsevier Science
Subjects
Applied sciences
Electronics
Exact sciences and technology
Miscellaneous
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Computer simulation
Theoretical study
Silicon Oxides
Oxidation
Silicon
Performance
Algorithm
Modeling
Finite difference method
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Summary:An efficient finite-difference algorithm for simulating the diffusion of several interacting impurities is proposed. Segregation at the moving Si/SiO 2 interface is taken into account. The algorithm consumes less CPU time than those based on coordinate transformation or finite-element technique, and guarantees high accuracy of the dose conservation. Efficient computer code has been developed for two-dimensional process simulation and has been integrated with device simulators for IBM PC and compatibles.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(92)90097-V