Lateral Control of Indium Content and Wavelength of III--Nitride Diode Lasers by Means of GaN Substrate Patterning

A patterned GaN/sapphire template with separate regions angled between 0.4 and 2° to the wurtzite $c$-plane was used to grow a 50 nm In 0.1 Ga 0.9 N layer. The photoluminescence wavelength varied between 403 and 389 nm according to the increased region's angle. The indium content measured using...

Full description

Saved in:
Bibliographic Details
Published inApplied physics express Vol. 5; no. 2; pp. 021001 - 021001-3
Main Authors Sarzyński, Marcin, Suski, Tadeusz, Staszczak, Grzegorz, Khachapuridze, Aleksander, Domaga$ł$a, Jaros$ł$aw Z, Czernecki, Robert, Plesiewicz, Jerzy, Paw$ł$owska, Joanna, Najda, Stephen P, Boćkowski, Micha$ł$, Perlin, Piotr, Leszczyński, Micha$ł$
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.02.2012
Online AccessGet full text

Cover

More Information
Summary:A patterned GaN/sapphire template with separate regions angled between 0.4 and 2° to the wurtzite $c$-plane was used to grow a 50 nm In 0.1 Ga 0.9 N layer. The photoluminescence wavelength varied between 403 and 389 nm according to the increased region's angle. The indium content measured using X-rays was reduced in regions with a higher miscut angle. Patterned freestanding GaN with separate regions angled by 0.35 and 0.85° to the $c$-plane was used to fabricate ridge-waveguide diode lasers. Each laser stripe was placed inside one of the angled regions. Lasing wavelengths of $405.8\pm 0.2$ and $401.0\pm 1$ nm were obtained for devices grown in those regions.
Bibliography:Patterned GaN substrate with flat top and bottom regions and angled slope regions. Optical microscopy image with Nomarki contrast is horizontally aligned with a stylus profile scan of the surface. In the pattern shown, the slope angle was 2.0°. Photoluminescence wavelength of InGaN layer grown on patterned GaN/sapphire substrate and its indium content measured by XRD for different slope angles. Solid lines are guides to the eye. A schematic view of an LD bar grown on patterned GaN substrate. Note that the slopes for chips A and B are angled differently. Lasing spectra of six adjacent devices from a single bar. The lasing wavelength for chip A (B) is longer (shorter) due to less (more) angled slopes of the GaN substrate and, hence, more (less) indium in the active region.
ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.5.021001