A novel radiation imaging sensor based on self-activated pixels

• Published in: IEEE transactions on nuclear science Vol. 42; no. 3; pp. 155 - 162
• Main Authors: Kavadias, S., Misiakos, K., Loukas, D.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.06.1995; Institute of Electrical and Electronics Engineers
• Subjects: Capacitance; Exact sciences and technology; Experimental methods and instrumentation for elementary-particle and nuclear physics; Image sensors; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; MOSFETs; Nuclear physics; Physics; Pixel; Position sensitive particle detectors; Preamplifiers; Radiation detectors, dosimeters; Radiation imaging; Strips; Tracking and position-sensitive detectors; X- and γ-ray instruments and techniques; X- and γ-ray sources, mirrors, gratings and detectors; X-ray detection; X-ray detectors; Radiation detectors; MOS transistors; Detectors; Theoretical study; Instrumentation; X radiation; Preamplifiers; Position sensitive detector; Charged particles
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/23.387355

A new position sensitive detector for charged particles and X-rays is proposed based on pixels containing MOS transistors as preamplifiers. The output of the preamplifiers is shorted to strip buses to obtain two-dimensional information with readout requirements similar to a strip detector. The total pixel capacitance is low enough (20-40 fF) to allow a large potential increase at the pixel that collected the charge. The nonlinearity introduced by the large voltage rise effectively switches on the transistors of this pixel and leaves all the other pixels of the same line at a low transconductance state, resulting in an excellent noise performance.< >