Parameters-dependent nonlinear absorptions in InGaN/GaN MQW and GaN film

• Published in: Physica. B, Condensed matter Vol. 370; no. 1; pp. 195 - 199
• Main Authors: Wen, Yuan, Xiong, Guiguang, Wang, Ququan, Chen, Daijian
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.12.2005; Elsevier
• Subjects: Absorption cross section; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Nonlinear absorption; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures; Physics; Quantum wells; 42.65.−k; Nonlinear absorption; Quantum wells; 78.67.De; Absorption cross section; 42.65.-k Nonlinear absorption; Confinement; Gallium nitrides; Multiple quantum well; Quantum effect; Absorption coefficients; Z scan; Indium nitrides; Absorption spectra; Non linear effect
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2005.09.013

The optical nonlinearities of an InGaN/GaN multiple quantum well (MQW) and a GaN film were experimentally investigated by using femtosecond Z-scan method in this paper. It was observed that the InGaN/GaN MQW displays a nonlinear saturable absorption (SA) effect and the nonlinear absorption coefficient β was determined to be - 5.5 × 1 0 3 cm / GW ; and the GaN film shows a reverse saturable absorption (RSA) effect and the β is 7.5 × 1 0 3 cm / GW . It is also found that the absorption cross sections and quantum confinement effect (QCE) give an influence on the SA of the InGaN/GaN MQW structure.