Stimulated ultraviolet emission from ZnO films annealed at high temperature

• Published in: Physica. B, Condensed matter Vol. 381; no. 1; pp. 20 - 23
• Main Authors: Liu, C.Y., Zhang, B.P., Binh, N.T., Wakatsuki, K., Segawa, Y.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 31.05.2006; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Other semiconductors; Physics; Post-annealing; Stimulated ultraviolet emission; ZnO film; 78.55.Et; ZnO film; 42.55.Zz; 61.82.Fk; Post-annealing; Stimulated ultraviolet emission; Annealing; Semiconductor materials; 78.55.Et ZnO film; Photoluminescence; Optical pumping; High temperature; MOCVD; Thin films; Zinc oxides; Stimulated emission
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2005.11.172

We report the results of an experimental investigation of optically pumped lasing in ZnO thin films deposited on a sapphire substrate by the metal organic chemical deposition technique. The mechanism of lasing in the case of an as-grown film and in case of an annealed film was investigated. After annealing, the crystalline quality was improved. Optically pumped lasing in a film annealed at 900 °C for 2 h was achieved at room temperature. The threshold of lasing was estimated to be about 30 kW/cm 2.