Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds

• Published in: Applied physics express Vol. 6; no. 7; pp. 075504 - 075504-4
• Main Authors: Sochacki, Tomasz, Bryan, Zachary, Amilusik, Mikolaj, Collazo, Ramon, Lucznik, Boleslaw, Weyher, Jan L, Nowak, Grzegorz, Sadovyi, Bogdan, Kamler, Grzegorz, Kucharski, Robert, Zajac, Marcin, Doradzinski, Roman, Dwilinski, Robert, Grzegory, Izabella, Bockowski, Michal, Sitar, Zlatko
• Format: Journal Article
• Language: English
• Published: The Japan Society of Applied Physics 01.07.2013

Crystallization of GaN by hydride vapor phase epitaxy (HVPE) on ammonothermally grown GaN seed crystals is described. The initial growth conditions for HVPE are determined and applied for further bulk growth. Smooth GaN layers up to 1.1 mm thick and of excellent crystalline quality, without cracks,...