Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds

Crystallization of GaN by hydride vapor phase epitaxy (HVPE) on ammonothermally grown GaN seed crystals is described. The initial growth conditions for HVPE are determined and applied for further bulk growth. Smooth GaN layers up to 1.1 mm thick and of excellent crystalline quality, without cracks,...

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Published inApplied physics express Vol. 6; no. 7; pp. 075504 - 075504-4
Main Authors Sochacki, Tomasz, Bryan, Zachary, Amilusik, Mikolaj, Collazo, Ramon, Lucznik, Boleslaw, Weyher, Jan L, Nowak, Grzegorz, Sadovyi, Bogdan, Kamler, Grzegorz, Kucharski, Robert, Zajac, Marcin, Doradzinski, Roman, Dwilinski, Robert, Grzegory, Izabella, Bockowski, Michal, Sitar, Zlatko
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.07.2013
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Summary:Crystallization of GaN by hydride vapor phase epitaxy (HVPE) on ammonothermally grown GaN seed crystals is described. The initial growth conditions for HVPE are determined and applied for further bulk growth. Smooth GaN layers up to 1.1 mm thick and of excellent crystalline quality, without cracks, and with low dislocation density are obtained. Preparation of the free-standing HVPE-GaN crystal by slicing and structural and optical quality of the resulting wafer are presented.
Bibliography:Am-GaN surfaces after annealing at 1045 °C for 20 min in NH 3 +H 2 atmosphere: AFM image, RMS roughness: 12.7 nm. 700-μm-thick HVPE-GaN on 400-μm-thick 1 in. Am-GaN seed: top view, grid 1 mm. (a) Typical hillock observed on the HVPE-GaN growing crystal surface; (b) HVPE-GaN surface after the DSE process; (c) cross section (cleaved) of HVPE-GaN/Am-GaN couple after the PEC process; an interface is clearly visible; (d) typical X-ray rocking curve for as-grown, 700-μm-thick HVPE-GaN on the Am-GaN seed. Free-standing HVPE-GaN sliced from the Am-GaN seed; both surfaces were mechanically polished after the slicing procedure. LT PL spectra acquired on the (0001) surface of the FS HVPE-GaN in (a) linear scale, (b) logarthmic scale; D 0 $X$ donor bound exciton; A 0 $X$ acceptor-bound exciton; $X_{\text{A}}$ and $X_{\text{B}}$ free excitons attributed to the A ($X_{\text{A}}^{n=1}$) and B ($X_{\text{B}}^{n=1}$) valence bands, respectively. RT transmission spectrum of the FS HVPE-GaN corrected for reflection.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.6.075504