Ion incorporation and exchange effects in porous silicon

We report an effect of alcaline metal ion incorporation into porous silicon (PS) structure from the electrolyte during anodic etching. Higher mass ions (K +, Rb +, Cs +) broaden the PS pore size distribution. After aging, these layers had light emission in the green range. Moreover, ion exchange eff...

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Bibliographic Details
Published inSolid state communications Vol. 87; no. 2; pp. 89 - 92
Main Authors Basmaji, P, Matvienko, B, Grivickas, V
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 1993
Elsevier
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of bulk materials and thin films
Physics
Chemical solution
Semiconductor materials
Impurity
Cesium
Rubidium
Porous metal
Pore size
Light emission
Electrolyte
Anodic dissolution
Silicon
Ion exchange
Potassium
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Summary:We report an effect of alcaline metal ion incorporation into porous silicon (PS) structure from the electrolyte during anodic etching. Higher mass ions (K +, Rb +, Cs +) broaden the PS pore size distribution. After aging, these layers had light emission in the green range. Moreover, ion exchange effects are demonstrated using buffered chemical solutions. Although, ion exchange is clearly visible by interchange of characteristic organic infrared (IR) vibration lines, it does not change emission of PS. We suggest the presence of zeolite-type structures in PS, as an explanation to observed properties.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(93)90331-G