Investigation of silicon heterojunction solar cells by photoluminescence under DC-bias

• Published in: EPJ Photovoltaics Vol. 4; p. 45106
• Main Authors: Courtois, Guillaume, Chatterjee, Parsathi, Suendo, Veinardi, Salomon, Antoine, Roca i Cabarrocas, Pere
• Format: Journal Article
• Language: English
• Published: Les Ulis EDP Sciences 01.01.2013
• Subjects: Bias; Defects; Dependence; Electroluminescence; Experiments; Heterojunctions; Light emitting diodes; Luminescence; Photoluminescence; Photovoltaic cells; Radiative recombination; Semiconductor lasers; Short circuits; Silicon; Silicon wafers; Solar cells; Thin films; Isle of Sark
• ISSN: 2105-0716; 2105-0716
• DOI: 10.1051/epjpv/2013022

Photoluminescence measurements on solar cells are usually carried out under open-circuit conditions. We report here on an innovative approach, in which the samples are simultaneously illuminated and DC-biased, so that the luminescence can be monitored under several operating points, that is to say several injection levels, ranging from short-circuit conditions to the light-emitting regime of the device. The experiments were performed on in-house made c-Si/a-Si:H heterojunction solar cells illuminated by a continuous green laser diode and positively biased. The luminescence spectra obtained this way were compared to those obtained with no light excitation source, which corresponds to usual electroluminescence mode and dark J(V). Firstly, the obtained luminescence spectra have shown the expected exponential dependence on the applied voltage. Furthermore, given that the amplitude of the emitted luminescence is proportional to the radiative recombination rate, this approach enables to indirectly characterise the non-radiative recombination phenomena. In the case of HJ solar cells with intrinsic thin layers processed on high quality FZ-wafers, non-radiative recombination is dominated by the defects at the c-Si/a-Si:H interface. The luminescence measurements presented here therefore give information on the quality of the surface passivation. An estimation of the interface defect density was achieved by comparing our experimental results with modelling.