Fabrication of amorphous InGaZnO thin-film transistor-driven flexible thermal and pressure sensors

• Published in: Semiconductor science and technology Vol. 27; no. 10; pp. 105019 - 105024
• Main Authors: Park, Ick-Joon, Jeong, Chan-Yong, Cho, In-Tak, Lee, Jong-Ho, Cho, Eou-Sik, Kwon, Sang Jik, Kim, Bosul, Cheong, Woo-Seok, Song, Sang-Hun, Kwon, Hyuck-In
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.10.2012
• Subjects: amorphous InGaZnO; flexible; sensor; thin-film-transistors
• ISSN: 0268-1242; 1361-6641
• DOI: 10.1088/0268-1242/27/10/105019

In this work, we present the results concerning the use of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) as a driving transistor of the flexible thermal and pressure sensors which are applicable to artificial skin systems. Although the a-IGZO TFT has been attracting much attention as a driving transistor of the next-generation flat panel displays, no study has been performed about the application of this new device to the driving transistor of the flexible sensors yet. The proposed thermal sensor pixel is composed of the series-connected a-IGZO TFT and ZnO-based thermistor fabricated on a polished metal foil, and the ZnO-based thermistor is replaced by the pressure sensitive rubber in the pressure sensor pixel. In both sensor pixels, the a-IGZO TFT acts as the driving transistor and the temperature pressure-dependent resistance of the ZnO-based thermistor pressure-sensitive rubber mainly determines the magnitude of the output currents. The fabricated a-IGZO TFT-driven flexible thermal sensor shows around a seven times increase in the output current as the temperature increases from 20 °C to 100 °C, and the a-IGZO TFT-driven flexible pressure sensors also exhibit high sensitivity under various pressure environments.